Abstract: A series of switchable resonators are proposed by incorporating the parasitic effects of two gallium nitride (GaN) high electron mobility transistor (HEMT) devices in this letter, based on ...
Abstract: This paper presents an ultra-low-loss 50-70 GHz single-pole double-throw (SPDT) switch built using a standard 90 nm CMOS process. The switch is based on λ/4 transmission lines with shunt ...
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