Researchers created a tiny memory device that improves as it gets smaller, breaking a key limitation in electronics. This ...

Members of a multifunctional thin film research group have published two landmark studies that explain how to engineer and enhance the stability of ferroelectric hafnium oxides, which are compatible ...

Ferroelectric materials are substances with spontaneous electrical polarization. Polarization refers to the separation of the negative and positive charges within a material. For ferroelectric ...

A new kind of memory device may finally solve the problem of overheating and battery drain in electronics. By shrinking ...

Researchers from the University of Cambridge, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo used hafnium oxide to build a resistive switching ...

Researchers have developed a material capable of both efficiently storing energy and retaining information, paving the way ...

New ultra-small nano-sized memory chip reduces energy leakage by shrinking and paves the way for more efficient electronics.

Ferroelectric Non-Volatile Photonic-Electronic Memory. (a) Schematic of memory structure based on micro-ring resonator. (b) Cross-sectional schematic of the memory. (c) Microscopic photo of the memory ...

A new technical paper titled “Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO 2-Based FeFETs for In-Memory-Computing Applications” was published by ...

Nanoscale ferroelectric tunnel junctions built on silicon show that shrinking device size dramatically boosts resistance contrast, offering a clear path to faster, denser non-volatile memory.

Breakthrough energy savings: Helium ion beam treatment of aluminum nitride enables ferroelectric switching with 40% less energy, promising cooler, more efficient electronics. Industry-ready process: ...